Deep Reaction Ion Etcher (DRIE)

range down to a few nanometres. The system will be used by many operators in a university laboratory environment. It must be easy to use and be insensitive to frequent change of process between batches. The processes include broad range of etching capability: low to high etch rate, wafer dicing, hi

gh uniformity, high open area, high aspect ratio, and nanometre scale. The system is intended for etching of silicon as well as other materials compatible with silicon etching, with both photoresist resins and hard masks for patterning.