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Available for Licensing: High-Quality Actinide Thin Films via Molecular Beam Epitaxy for Quantum and Optoelectronic Devices

Frist:15 Nov 2025, 02:00 GMT-5

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Referenznummer
1a561f63a22244e4a38603b6699b1a7b
NAICS
334413

High-Quality Actinide Thin Films via Molecular Beam Epitaxy for Quantum and Optoelectronic Devices Description Researchers at INL have developed a process to deposit high-quality epitaxial crystalline thin films of urani…

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