ICP3 Ion etching system FIRST ETH Zurich

the kW range with autotuning, spectroscopic monitoring of the plasma, automatic loading lock for fast loading, for sample sizes from 4 inch diameter, with sample temperature control in the range from 10 to 300 °C.

Delivery of a reactive ion etching system with inductively coupled plasma, consisting of a gas supply system for at least 9 gases, with process pressure up to 100 mtorr and gas flows up to 500 sccm, RF/ICP generators in