Silicon and Silicon/Germanium Epitaxial Wafers

r is 100 mm. Question 2: What is the preferred method of growth (1) CVD (Chemical Vapor Deposition) or (2) MBE (Molecular Beam Epitaxy). Answer 2: (B) The government is not specifying the production method and any production method that yields wafers meeting all specifications including thickness, c

omposition, and coherency would be acceptable. Vendors may elect to use different growth methods for different film stacks (e.g. MBE for thin stacks, and CVD for thick films). Minimum specification addition: For SiGe films, the composition