Available for Licensing: High-Quality Actinide Thin Films via Molecular Beam Epitaxy for Quantum and Optoelectronic Devices
Deadline:15 Dec 2025, 02:00 GMT-5
Tender information
SAM.govIdaho Falls, United States
- Type
- Special Notice
- Procedure
- Special Notice
- Ref. number
- f4ef2ce742cd43ce93a865bffd970ce5
- NAICS
- 334413
High-Quality Actinide Thin Films via Molecular Beam Epitaxy for Quantum and Optoelectronic Devices Description Researchers at INL have developed a process to deposit high-quality epitaxial crystalline thin films of urani…