Available for Licensing: High-Quality Actinide Thin Films via Molecular Beam Epitaxy for Quantum and Optoelectronic Devices
Frist:15 Dec 2025, 02:00 GMT-5
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High-Quality Actinide Thin Films via Molecular Beam Epitaxy for Quantum and Optoelectronic Devices Description Researchers at INL have developed a process to deposit high-quality epitaxial crystalline thin films of urani…
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