Available for Licensing: High-Quality Actinide Thin Films via Molecular Beam Epitaxy for Quantum and Optoelectronic Devices
Deadline:15 May 2026, 02:00 GMT-4
Tender information
SAM.govIdaho Falls, United States
- Type
- Special Notice
- Procedure
- Special Notice
- Ref. number
- 5dfe71f0c28f43b7ad5def3bcb61738e
- NAICS
- 334413
High-Quality Actinide Thin Films via Molecular Beam Epitaxy for Quantum and Optoelectronic Devices Description Researchers at INL have developed a process to deposit high-quality epitaxial crystalline thin films of urani…