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Available for Licensing: High-Quality Actinide Thin Films via Molecular Beam Epitaxy for Quantum and Optoelectronic Devices

Deadline:15 May 2026, 02:00 GMT-4

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SAM.gov

Idaho Falls, United States

Type
Special Notice
Procedure
Special Notice
Ref. number
5dfe71f0c28f43b7ad5def3bcb61738e
NAICS
334413

High-Quality Actinide Thin Films via Molecular Beam Epitaxy for Quantum and Optoelectronic Devices Description Researchers at INL have developed a process to deposit high-quality epitaxial crystalline thin films of urani

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