Available for Licensing: High-Quality Actinide Thin Films via Molecular Beam Epitaxy for Quantum and Optoelectronic Devices
Deadline:15 Mar 2026, 02:00 GMT-4
Tender information
SAM.govIdaho Falls, United States
- Type
- Special Notice
- Procedure
- Special Notice
- Ref. number
- 0d21d877835e4e05bb8d462bf298e35a
- NAICS
- 334413
High-Quality Actinide Thin Films via Molecular Beam Epitaxy for Quantum and Optoelectronic Devices Description Researchers at INL have developed a process to deposit high-quality epitaxial crystalline thin films of urani…