Silicon and Silicon/Germanium Epitaxial Wafers

g amended to answer public questions raised and to update a minimum specification. Question 1: For line items 1-7, could you please confirm the substrate diameter? Answer 1: The substrate diameter is 100 mm. Question 2: What is the preferred method of growth (1) CVD (Chemical Vapor Deposition) or (2

) MBE (Molecular Beam Epitaxy). Answer 2: (B) The government is not specifying the production method and any production method that yields wafers meeting all specifications including thickness, composition, and coherency would be acceptable