- Type
- goods (award)
- Procedure
- Open
- Ref. number
- 3874d869-dee6-4457-b536-564267971d8b
- CPV
- 44113810
For the improvement of wetting and bonding we are looking for a down-stream plasma tool, where we can apply different reactive gasses to modify the surface without high kinetic bombardment. Semiconductor chips, wafers an…
d substrates will be prepared before bonding to provide defined surface conditions. The plasma treatment should remove oxide or contamination layers from metal surfaces. From dielectric bonding layers oxide or water or hydrate molecules should be removed from the surface. Standard plasma tools are f
requently used to remove the surface layer by ion bombardment. We are requesting an atmospheric plasma in a down-stream configuration, which uses ions with lower kinetic energy and will change the surface state rather by chemical reactions