Integrated UHV Cluster for Pulsed Laser Deposition and Sputtering of Thin Films

aterials synthesis on oxide substrates up to 10 x 10 mm2 in area. It shall comprise a PLD chamber, a sputtering chamber, a central UHV transfer/handling chamber, and a load-lock for sample and PLD target-carousel exchange without venting the process chambers. All chambers must have base pressures be

low 1 x 10-7 mbar. The PLD chamber must include a KrF excimer laser, in-situ high-pressure RHEED and be suitable for routine high-temperature epitaxial oxide growth around 1100 °C. The sputtering chamber must allow DC and RF magnetron sputt